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| Power Transistors 2SB0939 (2SB939), 2SB0939A (2SB939A) Silicon PNP epitaxial planar type Darlington For midium-speed power switching Complementary to 2SD1262, 2SD1262A 10.00.3 1.50.1 Unit: mm 8.50.2 6.00.2 3.40.3 1.00.1 Collector-base voltage (Emitter open) 2SB0939 2SB0939A VCBO VCEO VEBO IC ICP PC -60 -80 -60 -80 -7 -8 -12 45 1.3 V (6.5) Collector-emitter voltage 2SB0939 (Base open) 2SB0939A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25C Junction temperature Storage temperature V V A A W B C C E 1 : Base 2 : Collector 3 : Emitter N-G1 Package Note) Self-supported type package is also prepared. Internal Connection C Tj Tstg 150 -55 to +150 Electrical Characteristics TC = 25C 3C Parameter Collector-emitter voltage (Base open) Collector-base cut-off current (Emitter open) 2SB0939 2SB0939A 2SB0939 2SB0939A IEBO hFE1 * hFE2 Base-emitter saturation voltage Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time VBE(sat) VCE(sat) fT ton tstg tf ICBO VCB = -60 V,IE = 0 VCB = -80 V,IE = 0 VEB = -7 V,IC = 0 VCE = -3 V, IC = -4 A VCE = -3 V, IC = -8 A IC = -4 A,IB = -8 mA IC = -4 A, IB = -8 mA VCE = -10 V, IC = -0.5 A, f = 1 MHz IC = -4 A, IB1 = -8 mA, IB2 = 8 mA VCC = -50 V 20 0.5 2 1 2 000 500 -2 -1.5 V V MHz s s s Symbol VCEO Conditions IC = -30 mA, IB = 0 Min -60 -80 -100 -100 -2 10 000 mA A Typ Max Unit V Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 Q P 2 000 to 5 000 4 000 to 10 000 Note) The part number in the parenthesis shows conventional part number. (7.6) Parameter Symbol Rating Unit (1.5) Absolute Maximum Ratings TC = 25C 2.00.5 * High forward current transfer ratio hFE * High-speed switching * N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 4.40.5 1 2 0.80.1 R = 0.5 R = 0.5 2.540.3 1.00.1 1.40.1 0.40.1 5.080.5 (8.5) (6.0) 1.3 3 4.40.5 0 to 0.4 14.40.5 Features 3.0+0.4 -0.2 1.5+0 -0.4 Publication date: March 2003 SJD00020BED 1 2SB0939, 2SB0939A PC Ta 50 (1) -8 (1)TC=Ta (2)With a 50x50x2mm Al heat sink (3)Without heat sink (PC=1.3W) TC=25C IC VCE Collector-emitter saturation voltage VCE(sat) (V) -100 VCE(sat) IC IC/IB=500 Collector power dissipation PC (W) 40 Collector current IC (A) -6 30 IB=-2.0mA -1.8mA -1.6mA -1.4mA -1.2mA -1.0mA -0.8mA -0.6mA -0.4mA -10 -4 25C TC=100C 20 -1 -25C -2 -0.2mA 10 (2) (3) 0 0 40 80 120 160 0 0 -1 -2 -3 -4 -5 - 0.1 - 0.1 -1 -10 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (A) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -100 VBE(sat) IC -100 VBE(sat) IC Base-emitter saturation voltage VBE(sat) (V) IC/IB=500 Base-emitter saturation voltage VBE(sat) (V) (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25 C -100 (1)IC/IB=250 (2)IC/IB=500 (3)IC/IB=1000 TC=25C -10 (3) -10 TC=-25C 25C 100C -10 (1) (2) (3) -1 (2) -1 (1) -1 - 0.1 - 0.1 -1 -10 - 0.01 - 0.1 -1 -10 - 0.1 - 0.1 -1 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) hFE IC Collector output capacitance C (pF) (Common base, input open circuited) ob 105 VCE=-3V Cob VCB 104 IE=0 f=1MHz TC=25C Safe operation area -100 Non repetitive pulse TC=25C ICP IC t=1ms t=10ms -1 t=300ms Forward current transfer ratio hFE TC=100C 104 -25C 102 103 Collector current IC (A) 25C 103 -10 10 - 0.1 2SB0939A 2SB0939 102 - 0.1 -1 -10 1 - 0.1 -1 -10 -100 - 0.01 -1 -10 -100 -1 000 Collector current IC (A) Collector-base voltage VCB (V) Collector-emitter voltage VCE (V) 2 SJD00020BED 2SB0939, 2SB0939A Rth t 103 (1)Without heat sink (2)With a 50x50x2mm Al heat sink (1) (2) 10 Thermal resistance Rth (C/W) 102 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) SJD00020BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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